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XN01504|XN1504 Datasheet

  • XN01504|XN1504

  • Composite Device - Composite Transistors

  • 3頁

  • ETC

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Composite Transistors
XN01504
(XN1504)
Silicon NPN epitaxial planar type
For amplification of low-frequency output
3
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
4
5
Unit: mm
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
鈻?/div>
Basic Part Number
鈥?/div>
2SD1915F
脳
2
10藲
1.1
+0.2
鈥?.1
(0.65)
鈥?/div>
Two elements incorporated into one package
(Emitter-coupled transistors)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
2
0.30
+0.10
鈥?.05
1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
50
20
25
300
500
300
150
鈭?5
to
+150
Unit
V
V
V
mA
mA
mW
擄C
擄C
Tr2
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
0 to 0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 5S
Internal Connection
3
4
5
1.1
+0.3
鈥?.1
Tr1
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE
ratio
*1
2
1
Symbol
V
CEO
V
BE
I
CBO
I
EBO
h
FE
h
FE(Small
/Large)
Conditions
I
C
=
1 mA, I
B
=
0
V
CE
=
2 V, I
C
=
4 mA
V
CB
=
50 V, I
E
=
0
V
EB
=
25 V, I
C
=
0
V
CE
=
2 V, I
C
=
4 mA
V
CE
=
2 V, I
C
=
4 mA
I
C
=
30 mA, I
B
=
3 mA
V
CB
=
6 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
20
Typ
Max
Unit
V
0.6
0.1
0.1
500
0.50
0.99
0.1
80
7
1.0
1 k鈩?/div>
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
錚?/div>
V
MHz
pF
鈩?/div>
2 500
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistanse
*2
V
CE(sat)
f
T
C
ob
R
on
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL
STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
*2: R
on
start resistance test circuit
I
B
=
5 mA
V
B
V
V
V
B
脳
1 000
(鈩?
V
A
鈭?/div>
V
B
f
=
1 kHz
V
=
0.3 V
V
A
R
on
=
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00029BED
0.4
鹵0.2
鈻?/div>
Features
5藲
1

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